Minority-carrier mobility anomalies in low-resistivity silicon solar cells

Journal Article · Mon Jul 28 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97170· OSTI ID:5468806

Weizer, V G; DeLombard, R

Measurement of the minority-carrier mobility in the base region of the high-voltage metal-insulator-N-P solar cell, as well as in other 0.1 ..cap omega.. cm cells, provides direct proof that the high voltages measured for that cell are due not only to improved emitter characteristics but to an improved base region as well. The base characteristics are shown to be quite sensitive to the effects of diffusion induced lattice stress originating in the emitter. The implications of these findings with regard to the fabrication of high efficiency cells are discussed.

• Research Organization: National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
• OSTI ID: 5468806
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARRIER MOBILITY
DATA
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC POTENTIAL
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
INFORMATION
MOBILITY
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
STRESSES