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Method of using polysilane positive photoresist materials

Patent ·
OSTI ID:5754219
;
A method is described of photopatterning a positive image onto a substrate coated with polysilane, comprising irradiating the coated substrate with actinic radiation forming a pattern of the positive image on the substrate, whereby the portions of the polysilane coating on which the radiation impinges are photodepolymerized to form products which volatilize and whereby the substrate becomes uncoated in the pattern of the positive image.
Assignee:
Dept. of Energy, Washington, DC
Patent Number(s):
US 458725
OSTI ID:
5754219
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400500 -- Photochemistry
CHEMICAL REACTIONS
COATINGS
DECOMPOSITION
DEPOLYMERIZATION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EVAPORATION
HYDRIDES
HYDROGEN COMPOUNDS
IMAGE PROCESSING
IRRADIATION
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHASE TRANSFORMATIONS
PHOTOCHEMICAL REACTIONS
PHOTOCONDUCTIVITY
PHOTOLYSIS
PHOTOSENSITIVITY
PHYSICAL PROPERTIES
PROCESSING
SENSITIVITY
SILANES
SILICON COMPOUNDS
SUBSTRATES