20. 2% efficiency Al/sub 0. 4/Ga/sub 0. 6/As/GaAs tandem solar cells grown by molecular beam epitaxy

Journal Article · Mon Dec 14 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98272· OSTI ID:5748678

Amano, C; Sugiura, H; Yamamoto, A; Yamaguchi, M

We report on the fabrication and the characteristics of Al/sub 0.4/Ga/sub 0.6/As/GaAs tandem solar cells. The annealing characteristics of GaAs tunnel diodes are studied. It is found that the degradation of the tunnel peak current density by the annealing is suppressed for the diodes composed of a GaAs tunnel junction sandwiched between AlGaAs layers. The tunnel junction is applied to the interconnect between the Al/sub 0.4/Ga/sub 0.6/As top cell and the GaAs bottom cell for the tandem solar cell. The cell has a short-circuit current density of 13.8 mA/cm/sup 2/, an open-circuit voltage of 2.10 V, a fill factor of 70.0%, and a conversion efficiency of 20.2% at 1 sun, AM1.5. This efficiency is the highest ever reported at 1 sun for tandem solar cells.

• Research Organization: NTT Electrical Communications Laboratories, Tokai, Ibaraki 319-11, Japan
• OSTI ID: 5748678
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:24; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CONDUCTOR DEVICES
CONNECTORS
CURRENT DENSITY
DATA
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRICAL EQUIPMENT
EPITAXY
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INFORMATION
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SOLAR CELLS
SOLAR EQUIPMENT
TUNNEL DIODES