Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs0.75P0.25/Si Tandem Solar Cells
Journal Article
·
· IEEE Journal of Photovoltaics
- The Ohio State Univ., Columbus, OH (United States); The Ohio State University
- The Ohio State Univ., Columbus, OH (United States)
A high-performance metamorphic Al0.2Ga0.8As0.75P0.25/GaAs0.75P0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs0.75P0.25/Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic chemical vapor deposition. Doping optimization focused on both bulk doping concentrations and mitigating the transient incorporation effects that otherwise causes non-abrupt doping profiles in the Te doped layer. Furthermore, these efforts resulted in a fully-relaxed metamorphic tunnel diode at the target lattice constant having a peak tunneling current density (JP) of 279.1 A·cm –2 and a zero-bias resistance area product (RA) of 3.0×10 –4 Ω·cm2. After post-growth annealing to emulate the thermal load of the GaAs0.75P0.25 top cell growth and elimination of the performance enhancing carbon activation anneal, the device achieved JP = 13.1 A·cm –2 and RA = 1.5×10 –3 Ω·cm2. These worst-case values are very promising as they enable the operation of GaAs0.75P0.25/Si tandems under one-sun AM1.5G illumination with negligible series resistance and at AM1.5D concentrations up to 240 suns with only 0.1% absolute efficiency loss.
- Research Organization:
- The Ohio State Univ., Columbus, OH (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- EE0007539
- OSTI ID:
- 1784257
- Journal Information:
- IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 2 Vol. 11; ISSN 2156-3381
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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