Simulation of a three-dimensional semiconductor device

Journal Article · Tue Feb 01 04:00:00 EST 1983 · Simulation; (United States)

DOI:https://doi.org/10.1177/003754978304000203· OSTI ID:5746767

Akers, L A; Wang, T M

In recent years, semiconductor manufacturers have been able to steadily reduce the physical area required by devices, thus alllowing an increasing number of circuit functions on a single chip. Smaller semiconductor devices require more detailed and accurate analysis because minor errors can degrade their performance substantially. A new, completely numerical, three-dimensional model of a MOSFET allows a unified treatment of small devices. Preliminary results show that device size affects the surface potential and threshold voltage. Classical theory does not predict these effects. Although the model currently converges slowly, it can still be a useful tool in analyzing new small-geometry devices.

• Research Organization: Arizona State University, Tempe
• OSTI ID: 5746767
• Journal Information: Simulation; (United States), Journal Name: Simulation; (United States) Vol. 40:2; ISSN SIMUA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
COMPUTER-AIDED DESIGN
MATHEMATICAL MODELS
MOS TRANSISTORS
MOSFET
NONLINEAR PROBLEMS
PERFORMANCE
SEMICONDUCTOR DEVICES
SIZE
THREE-DIMENSIONAL CALCULATIONS
TRANSISTORS