Epitaxial YBa[sub 2]Cu[sub 3]O[sub 7] growth on KTaO[sub 3] (001) single crystals

Journal Article · Mon Dec 13 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110150· OSTI ID:5741781

Prusseit, W ^[1]; Boatner, L A ^[2]; Rytz, D ^[3]

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1. Physik Department E10, TU Muenchen, James-Franck Strasse 1, 85747 Garching (Germany)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
3. Centre de Recherche en Optoelectronique Sandoz Huningue SA, 68330 Huningue (France)

Epitaxial films of YBa[sub 2]Cu[sub 3]O[sub 7] have been grown on KTaO[sub 3] (100) single-crystal substrates by means of reactive thermal coevaporation at temperatures between 560 and 750 [degree]C. The orientation of the YBa[sub 2]Cu[sub 3]O[sub 7] crystallographic [ital c] axis in these films was perpendicular to the substrate surface throughout the complete range of deposition temperatures even though the KTaO[sub 3] lattice constant represents a better match to the YBa[sub 2]Cu[sub 3]O[sub 7] [ital c] axis than to the [ital a] and [ital b] axes. Since the nucleation and growth of YBa[sub 2]Cu[sub 3]O[sub 7] films are known to be relatively sensitive to the formation of [ital a]-axis-oriented grains at imperfections on the substrate material, an investigation of the influence of the substrate surface finish on the film properties was carried out. Using substrates with appropriately prepared surfaces, YBa[sub 2]Cu[sub 3]O[sub 7] films exhibited a high degree of crystalline perfection, zero resistance at temperatures of 89 K and critical current densities up to 3[times]10[sup 6] A/cm[sup 2].

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5741781
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:24; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

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