Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

Technical Report · Thu Mar 01 00:00:00 EST 1984

OSTI ID:5735631

Spitzer, M B

The application of the ion implantation process to present day materials and fabricate cells and temperature effects were investigated. Thermal annealing was compared to pulsed electron beam annealing. It is found that use of ion implantation allows tailoring of thermal process to a particular sheet material, EFG is improved after high temp, SILSO is degraded after high temp, HEM affected most at 550 to 750 deg C, SEMIX appears independent of process temp, and CZ is degraded by processing at 750 deg C. It is concluded that ion implantation and rapid thermal annealing can be successfully employed for junction formation.

• Research Organization: Spire Corp., Bedford, MA (USA)
• OSTI ID: 5735631
• Report Number(s): N-85-15281
• Resource Relation: Other Information: In JPL, proceedings of the 23rd project integration meeting, 353-364 p. (N--85-15260 06-44)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
FABRICATION
ANNEALING
EVALUATION
HIGH TEMPERATURE
ION IMPLANTATION
MECHANICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SILICON
TEMPERATURE EFFECTS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion