Evaluation of the ion-implantation process for production of solar cells from silicon sheet materials. Quarterly report No. 2, April 1-July 1, 1983

Technical Report · Wed Jun 01 00:00:00 EDT 1983

DOI:https://doi.org/10.2172/5760956· OSTI ID:5760956

Spitzer, M. B.

The work reported has focused on the study of furnace anneal parameters for various sheet silicon materials. Materials examined include those produced by edge-defined film-fed growth (EFG), heat exchanger method (HEM), Czochralski method (CZ), and SILSO. For cells of each material, tested under simulated AM1 conditions (100 mW/cm/sup 2/), data presented include electrical properties, spectral response of quantum efficiency, and dark I-V characteristics. (LEW)

• Research Organization: California Institute of Technology (CalTech), Pasadena, CA (United States). Jet Propulsion Lab. (JPL)
• DOE Contract Number: NAS-7-100-956381
• OSTI ID: 5760956
• Report Number(s): DOE/JPL/956381-83/2; ON: DE83017613
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON SOLAR CELLS
ANNEALING
PERFORMANCE TESTING
CURRENT DENSITY
CZOCHRALSKI METHOD
EFG METHOD
ELECTRIC POTENTIAL
EXPERIMENTAL DATA
FILL FACTORS
HEAT EXCHANGER METHOD
QUANTUM EFFICIENCY
SPECTRAL RESPONSE
CRYSTAL GROWTH METHODS
DATA
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
HEAT TREATMENTS
INFORMATION
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TESTING
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture