Stopping power for low-velocity Mg ions in Si, Ge, and GaAs

Journal Article · Sat Jun 15 04:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.43.13967· OSTI ID:5729575

Arstila, K; Tikkanen, P; Kuronen, A ^[1]

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1. Accelerator Laboratory, University of Helsinki, Haemeentie 100, SF-00550 Helsinki, Finland (FI)

The stopping power for {sup 26}Mg ions in Si, Ge, and GaAs has been studied in the energy region 0--0.8 MeV/nucleon by application of the inverted-Doppler-shift attenuation-analysis method. Compared to the commonly used empirical electronic stopping power by Ziegler, Bierscak, and Littmark, significant deviations and a different velocity dependence were obtained. The electronic stopping power was determined to an accuracy of {plus minus}5%. The experimental nuclear stoping power was taken into account in the deduction of the electronic stopping power.

• OSTI ID: 5729575
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:17; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
IONS
MAGNESIUM IONS
MATERIALS
METALS
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
STOPPING POWER