Electronic stopping power of Si and Ge for MeV-energy Si and P ions

Journal Article · Mon Jan 13 04:00:00 EST 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106972· OSTI ID:5589711

Arstila, K; Tikkanen, P ^[1]

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1. Accelerator Laboratory, University of Helsinki, Haemeentie 100, SF-00550 Helsinki (Finland)

The electronic stopping powers of Si and Ge for 0--30 MeV {sup 29}Si and {sup 29}P ions are reported. The stopping power was studied by application of a technique of nuclear physics, the inverted analysis of Doppler-shift attenuation data. The measured values at 30 MeV are about 15% lower and at 2 MeV considerably higher than the predictions of the commonly used empirical electronic stopping powers by J. F. Ziegler, J. P. Biersack, and U. Littmark ({ital The} {ital Stopping} {ital Power} {ital and} {ital Ranges} {ital of} {ital Ions} {ital in} {ital Matter} (Pergamon, New York, 1985), Vol. 1). The experimental nuclear stopping power was taken into account in the deduction of the electronic stopping power.

• OSTI ID: 5589711
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:2; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
COLLISIONS
DOPPLER BROADENING
ELECTRON COLLISIONS
ELECTRON-ION COLLISIONS
ELEMENTS
ENERGY RANGE
EV RANGE
GAMMA SPECTRA
GERMANIUM
ION COLLISIONS
IONS
KEV RANGE
LINE BROADENING
METALS
MEV RANGE
MEV RANGE 01-10
MEV RANGE 10-100
NUCLEAR REACTIONS
PHOSPHORUS IONS
RADIATION TRANSPORT
SEMIMETALS
SILICON
SILICON IONS
SPECTRA
STOPPING POWER