Single-mode operation of mushroom structure surface emitting lasers

Journal Article · Tue Jan 01 04:00:00 EST 1991 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5726947

Wang, Y J; Dziura, T G; Wang, S C ^[1]; Du, G; Wang, S ^[2]

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1. Lockheed Palo Alto Research Lab., Palo Alto, CA (US)
2. Electronics Research Lab., Univ. of California, Berkeley, CA (US)

Mushroom structure vertical cavity surface emitting lasers with a 0.6 {mu}m GaAs active layer sandwiched by two Al{sub 0.6{sup {minus}}}Ga{sub 0.4}As-Al{sub 0.08}Ga{sub 0.92}As multilayers as top and bottom mirrors exhibit 15 mA pulsed threshold current at 880 nm. Single longitudinal and single transverse mode operation was achieved on lasers with a 5 {mu}m diameter active region at current levels near 2 {times} I{sub th}. The light output above threshold current was linearly polarized with a polarization ratio of 25:1.

• OSTI ID: 5726947
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 3:1; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASER CAVITIES
LASERS
LAYERS
OPERATION
OPTICAL MODES
OSCILLATION MODES
PNICTIDES
POLARIZATION
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SHAPE
SOLID STATE LASERS
SURFACES
THRESHOLD ENERGY
VISIBLE RADIATION