Intraband relaxation time in quantum-well lasers

Journal Article · Fri Sep 01 04:00:00 EDT 1989 · IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA)

DOI:https://doi.org/10.1109/3.35228· OSTI ID:5726144

Asada, M ^[1]

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1. Dept. of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152 (JP)

Intraband relaxation time, which causes spectral broadening of optical gain and spontaneous emission spectra, is estimated theoretically for quantum-well lasers. Carrier-carrier and carrier-longitudinal optical (LO) phonon scattering mechanisms are considered, and it is shown that hole-hole electron-hole, and hole-LO phonon scattering are dominant in spectral broadening. Intraband relaxation time determined by all of these mechanisms increases slightly with the decrease of well width. Dependence of intraband relaxation time on temperature, carrier density, and energy of electron and hole is also shown. Spectral line shape is discussed as an extension of the above calculation and an approximated formula is given.

• OSTI ID: 5726144
• Journal Information: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA), Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA) Vol. 25:9; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
657002 -- Theoretical & Mathematical Physics-- Classical & Quantum Mechanics
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMPLIFICATION
CARRIER DENSITY
EFFICIENCY
ELECTRON-HOLE COUPLING
EMISSION SPECTRA
GAIN
LASERS
PHONONS
QUANTUM EFFICIENCY
QUASI PARTICLES
RELAXATION TIME
SCATTERING
SPECTRA
TEMPERATURE DEPENDENCE