Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers
The effect of intraband carrier relaxation on the threshold characteristics of InGaAsP quantum well (QW) lasers is studied. The dependence of the intraband hole-hole relaxation time {tau}{sub int} on temperature and carrier density is analyzed. It is shown that taking into account the finiteness of {tau}{sub int} and its dependence on temperature and carrier density strongly affects the gain and the threshold current density of QW lasers.
- OSTI ID:
- 21088554
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 40; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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