Dielectric function and band gaps of Si{sub 1-x}C{sub x} and Si{sub 1-x}Ge{sub x}C{sub y} semiconductor alloys grown on Si (0 {le} x {le} 0.014)
Conference
·
OSTI ID:57244
The authors have characterized the optical properties of heteroepitexial Si{sub 1-x}C{sub x} and Si{sub 0.924-x}Ge{sub 0.076}C{sub x} (0 {le} x {le} 0.014) alloys grown on Si substrates by solid phase epitaxy using spectroscopic ellipsometry. The measured dielectric function confirms that the samples are of good crystalline quality. The authors determined band gaps of E{sub 1} and E{sub 2} by lineshape-fitting the features in the second derivative spectra of the dielectric functions. The authors discuss the shift of the band gaps.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 57244
- Report Number(s):
- SAND--95-0847C; CONF-950412--6; ON: DE95011022
- Country of Publication:
- United States
- Language:
- English
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