Band gap measurement of Si{sub 1-x}C{sub x}/Si (0{le}x{le}0.014) alloys using photoluminescence and spectroscopic ellipsometry
Conference
·
OSTI ID:53704
The authors have characterized the optical properties of heteroepitexial Si{sub 1-x}C{sub x}/Si (0{le}x{le}-0.014) alloys grown on Si substrates by solid phase epitaxy using spectroscopic ellipsometry and photoluminescence. The measured dielectric function confirms that the samples are of good crystalline quality. The 14-K photoluminescence spectra of Si{sub 1-x}C{sub x}/Si show several defect peaks. After hydrogen passivation, the authors observed a new peak near 1.15-1.17 eV which increases in energy with the incorporation of carbon. The authors tentatively assign this peak as the no-phonon peak of the Si{sub 1-x}C{sub x} epi-layer. They discuss the alloy shift of the observed spectroscopic features in terms of the C-induced change in the Si indirect band gap.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 53704
- Report Number(s):
- SAND--94-2718C; CONF-950412--8; ON: DE95011020
- Country of Publication:
- United States
- Language:
- English
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