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U.S. Department of Energy
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Cadmium sulfide/copper sulfide heterojunction cell research. Technical progress report No. 4, June 1, 1978-August 31, 1978

Technical Report ·
DOI:https://doi.org/10.2172/5720423· OSTI ID:5720423
The multi-cathode deposition system has been brought into operation and used to deposit multilayer films of Cu/sub x/S/CdS/In/Al in a single pumpdown. In addition, it has been used to prepare In doped CdS films by co-sputtering of Cd and In. Analysis of the photovoltaic devices deposited in the system to date have determined the areas requiring further development. These are the CdS/substrate contact and the doping distribution through the CdS film. The initial photovoltaic cells have been characterized by a built-in retarding field. Electrical, optical, and structural measurements on all components of the multilayer films have been carried out and related to the corresponding deposition parameters. The theory of reactive sputter deposition of compound semiconductors has been developed to explain the rate limiting deposition processes and the ease with which a stoichiometric compound is formed.
Research Organization:
Lockheed Missiles and Space Co., Palo Alto, CA (USA). Lockheed Palo Alto Research Lab.
OSTI ID:
5720423
Report Number(s):
SAN-1459-4; LMSC-D-630309
Country of Publication:
United States
Language:
English