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Title: Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly technical progress report No. 2, January 1-March 31, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5718849· OSTI ID:5718849

Research is being conducted on grain growth phenomena and interactions pertaining to an all-vacuum deposition technique for fabricating thin-film polycrystalline silicon solar cells. Investigations dealt primarily with the structure silicon/TiB/sub 2//alumina substrate, which seems thus far to be the most satisfactory from the standpoint of stability and potential applicability to low-cost solar cells. Secondary ion mass spectrometry was used to study the various interfaces of the device structure and revealed important information on possible sources of impurities and instabilities. Investigation of the B/Ti couple on alumina indicated that a stoichiometric TiB/sub 2/ back electrode could easily be formed and that excess boron could be removed, probably through reaction with water vapor. Unusually large unoriented grains (approx. 30 ..mu..m) were grown under certain conditions that are described, but not yet fully understood.

Research Organization:
Johns Hopkins Univ., Laurel, MD (USA). Applied Physics Lab.
DOE Contract Number:
ET-78-A-03-2208
OSTI ID:
5718849
Report Number(s):
SAN-2208-T2
Country of Publication:
United States
Language:
English