Hydrogen and defects in laser annealed amorphous silicon

Conference · Mon Jan 01 00:00:00 EST 1979

OSTI ID:5712164

Peercy, P S; Stein, H J

Hydrogenated amorphous silicon was crystallized by pulsed laser annealing to yield hydrogenated crystalline silicon. Nuclear reaction analysis was used to measure hydrogen concentrations and depth distributions. Infrared absorption measurements were used to study the chemically bonded hydrogen. The ir measurements also reveal that divacancies may remain in the lightly-damaged underlying crystalline region after annealing with laser energies sufficient to produce recrystallization. Divacancies anneal out by 350/sup 0/C and defect structures in the vicinity of the bonded hydrogen change between 200 to 500/sup 0/C. No evidence for point defects or chemically bonded hydrogen was found after anneals above 500/sup 0/C.

• Research Organization: Sandia Labs., Albuquerque, NM (USA)
• DOE Contract Number: EY-76-C-04-0789
• OSTI ID: 5712164
• Report Number(s): SAND-79-1695C; CONF-791112-37; TRN: 80-002075
• Resource Relation: Conference: Symposium on the scientific basis for nuclear waste management, Boston, MA, USA, 26 Nov 1979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HYDROGEN
DIFFUSION
TRAPPING
SILANES
RECRYSTALLIZATION
SILICON
ION IMPLANTATION
AMORPHOUS STATE
ANNEALING
DEFECTS
LASERS
MICROSTRUCTURE
POINT DEFECTS
CRYOGENIC FLUIDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
FLUIDS
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
NONMETALS
SEMIMETALS
SILICON COMPOUNDS
360202* - Ceramics
Cermets
& Refractories- Structure & Phase Studies