Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)

Journal Article · Mon May 01 04:00:00 EDT 1995 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.579803· OSTI ID:57107

Garcia, R ^[1]; Daley, K E; Sego, S; Culbertson, R J ^[2]; Poker, D B ^[3]

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1. Motorola Inc. Compound Semiconductor-1, Tempe, Arizona 85284 (United States)
2. Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287 (United States)
3. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Si-capped SiGeC films grown on Si(100) substrates by chemical vapor deposition were implanted with several doses of 200 keV Sb ions. One sample was implanted with 1{times}10{sup 16} ions/cm{sup 2} of 200 keV Si ions at 77 K in order to completely amorphize the layer. Three sets of samples were rapid thermal annealed for 200 s at both 600 and 800 {degree}C and for 1 min at 960 {degree}C. Samples were studied using Rutherford backscattering spectrometry and ion channeling. The carbon composition was quantified using the {sup 12}C({alpha},{alpha}){sup 12}C resonance at 4.265 MeV. It was found that the regrowth kinetics were significantly different from those of SiGe alloys. A greater thermal budget is required for regrowth. Furthermore, at the higher temperatures the carbon diffuses out of the layer leaving a carbon depleted region. {copyright} {ital 1995}{ital American} {ital Vacuum} {ital Society}

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 57107
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 13; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANTIMONY IONS
CHEMICAL VAPOR DEPOSITION
EPITAXY
GERMANIUM CARBIDES
ION CHANNELING
ION IMPLANTATION
KEV RANGE 100-1000
RUTHERFORD SCATTERING
SILICON CARBIDES
SILICON IONS
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K