Metastable SiC and SiGeC alloys by carbon implantation and solid phase epitaxy

Conference · Thu Dec 31 04:00:00 EST 1992

OSTI ID:10131124

Strane, J W; Edwards, W J ^[1]; Mayer, J W ^[2]; Stein, H S; Lee, S R; Doyle, B L; Picraux, S T ^[3]

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1. Cornell Univ., Ithaca, NY (United States)
2. Arizona State Univ., Tempe, AZ (United States). Center for Solid State Science
3. Sandia National Labs., Albuquerque, NM (United States)

We demonstrate the formation of metastable Si{sub 1-y}C{sub y} and Si{sub 1-y-x}Ge{sub x}C{sub y} alloys by C ion implantation and solid phase epitaxial regrowth. Carbon was introduced into Si and SiGe layers by 5, 12 and 25 keV implants to achieve nearly uniform profiles of 0.7 and 1.4 at. % C. The 0.7 at. % C specimens exhibit the highest quality epitaxial layers after SPE regrowth, whereas in higher C concentration specimens solid phase regrowth was impeded. The localized vibrational mode of C occupying substitutional lattice sites in the diamond lattice provides a signature of the metastable phase and is used to monitor the loss of stability due to precipitation of silicon carbide. The SiC and SiGeC alloys retained substitutional carbon during 30 minute isochronal anneals up to 850{degree}C.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10131124
• Report Number(s): SAND--92-1617C; CONF-921101--89; ON: DE93007594
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPE AND RADIATION SOURCES
070205
36 MATERIALS SCIENCE
360102
360202
ANNEALING
CARBON ADDITIONS
CARBON IONS
EPITAXY
GERMANIUM ALLOYS
INDUSTRIAL APPLICATIONS
RADIATION PROCESSING
INFRARED SPECTRA
ION IMPLANTATION
KEV RANGE 01-10
KEV RANGE 10-100
LAYERS
METASTABLE STATES
PRECIPITATION
SILICON
SILICON ALLOYS
SILICON CARBIDES
STRUCTURE AND PHASE STUDIES
VIBRATIONAL STATES