Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High temperature Raman studies of phase transitions in thin film dielectrics

Conference ·
OSTI ID:5701754

Rapid and unambiguous characterization of crystalline phases in submicron sputter deposited TiO/sub 2/ films on silica substrates can be inferred from measured Raman spectra. Pure anatase and rutile, mixed phase, and amorphous films to thicknesses of several hundred Angstroms and greater yield Raman spectra exhibiting little interference from the substrate when the appropriate component of the scattered light is analyzed. In situ Raman spectra were acquired as a function of temperature to 900/sup 0/C using conventional radiant heating techniques and to temperatures near 2000/sup 0/C using 10.6..mu.. radiation from a CW CO/sub 2/ laser as a localized heating source. Pulsed Raman excitation/gated detection techniques were used to minimize blackbody radiation interference at these high temperatures. Anatase and amorphous TiO/sub 2/ films transform irreversibly to the rutile phase at temperatures below 900/sup 0/C while rutile appears to be stable at much higher temperatures. Measurements performed on uncoated silica substrates at temperatures where the glass becomes fluid suggest that the strongly crosslinked glass has partially transformed into a chain-like structure.

Research Organization:
Pacific Northwest Labs., Richland, WA (USA)
DOE Contract Number:
AC06-76RL01830
OSTI ID:
5701754
Report Number(s):
PNL-SA-12738; CONF-850421-3; ON: DE85010973
Country of Publication:
United States
Language:
English