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Nature of inhomogeneities and luminescence centers in low-resistance Al-doped ZnS single crystals

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:5698991
The authors study low-resistance Al-doped ZnS single crytals and find that they exhibit a banding nonuniformity, which is explained by the nonuniform distribution of aluminum and oxygen impurities in them. The intense blue emission of the crystals is caused by the high-resistance layer, in which oxygen concentrates, while aluminum is completely bound to the oxygen. The emission is caused by the annihilation of localized excitons. The low-resistance layers with the weak blue luminescence are intercalations of oxygen-depleted Al-doped ZnS. ZnS crystals containing Al and O in equal concentrations are stable.
Research Organization:
Moscow Energy Institute
OSTI ID:
5698991
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 21:7; ISSN INOMA
Country of Publication:
United States
Language:
English