lambda/4-shifted InGaAsP/InP DFB lasers

Journal Article · Tue Jul 01 04:00:00 EDT 1986 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1986.1073089· OSTI ID:5696019

Utaka, K; Akiba, S; Sakai, K; Matsushima, Y

lambda/4-shifted InGaAsP/InP DFB lasers were studied theoretically and experimentally. The effect of reflectivities at the end of a DFB region and that of a lambda/4-shift position were analyzed in terms of stability of single-longitudinal-mode operation and asymmetric power distribution. The shift of the lambda/4-shift position from the center to a certain place in the DFB region, with the end reflectivities less than several tenths of a percent, seemed most effective for efficient power extraction and reproducible DSM operation. The devices emitting at 1.5 ..mu..m range were fabricated by using negative and positive photoresists and employing one-step holographic exposure. They exhibited single-longitudinal-mode operations just at or closely around the center of the stopband, i.e., the Bragg wavelength. The slight wavelength deviations from the center were found to be attributed to the accidental phase-shift variations from the optimal value. Concerning such deviations in the fabricated devices, a simple and useful criterion, for example, P/sub 0//P/sub 1/ greater than or equal to 2-3 at I/I/sub th/ = 0.9, for stable DSM operation was presented. Statistically, single-longitudinal-mode operations were observed in 95 devices out of 100, and the theoretical prediction was verified. The side-mode-suppression ratios under high-speed direct modulation were 35 dB or more.

• Research Organization: KDD Research and Development Labs., Tokyo 153
• OSTI ID: 5696019
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-22:7; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HOLOGRAPHY
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MATHEMATICS
MODULATION
OPERATION
PHASE SHIFT
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTORS
PNICTIDES
POWER DISTRIBUTION
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
STATISTICS
WAVELENGTHS