Amorphous silicon devices and method of producing

Patent · Tue Nov 10 00:00:00 EST 1987

OSTI ID:5692438

Campbell, W P

A silicon photovoltaic device is described comprising: (a) a substrate comprising an electrically conductive material; (b) a first semiconductor layer formed on the substrate. The first semiconductor layer is formed by deposition of amorphous silicon in a glow discharge in the presence of a magnetic field. The magnetic field is perpendicular to the substrate surface on which the first semiconductor layer is formed; (c) a second semiconductor layer formed on the first semiconductor layer. The second semiconductor layer is formed by deposition of amorphous silicon in a glow discharge in the presence of a magnetic field which is reversed in polarity from the magnetic field used in forming the first semiconductor layer; and (d) an electrically conducting grid on the second semiconductor layer.

• Assignee: NOV; NOV-88-088011; EDB-88-015822
• Patent Number(s): US 4705913
• OSTI ID: 5692438
• Resource Relation: Patent File Date: Filed date 9 Apr 1986
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
DEPOSITION
SILICON SOLAR CELLS
DESIGN
FABRICATION
ELECTRIC CONDUCTORS
MAGNETIC FIELDS
SUBSTRATES
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion