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Title: Laser diagnostic studies of plasma etching and deposition. [CF/sub 2/]

Conference ·
OSTI ID:5692170

Laser excited fluorescence spectroscopy was used to determine that CF/sub 2/ radicals control the silicon dioxide to silicon etch-rate ratio in fluorocarbon discharges used to etch silicon and silicon dioxide. CF/sub 2/ was found to control the etch-rate ratio through polymer formation which selectively inhibits the silicon etch rate. 9 refs., 4 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5692170
Report Number(s):
SAND-85-0082C; CONF-840761-2; ON: DE85009494
Resource Relation:
Conference: International conference on laser processing and diagnostics applications in electronic materials, Linz, Austria, 15 Jul 1984
Country of Publication:
United States
Language:
English

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