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Ion beam mixing of U-based bilayers

Journal Article · · Journal of Materials Research; (USA)
 [1]; ; ;  [2];  [3];  [4]
  1. Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (USA)
  2. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (USA)
  3. Physics Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (USA)
  4. Martin Marietta Y12 Plant, Oak Ridge, Tennessee 37831 (USA)
Bilayer samples of U/Al, U/Ti, U/Si, and U/C have been ion beam mixed with 400 keV Ar and U/Al with Xe ions at doses from 2{times}10{sup 15} to 1{times}10{sup 17} ions/cm{sup 2}. Mixing experiments were performed at various temperatures between 77 and 420 K. The amount of interfacial mixing, 4{ital Dt}, follows a linear dose dependence below a critical temperature depending on the system studied. Below this temperature, the mixing efficiency, defined as {partial derivative}(4{ital Dt})/{partial derivative}{Phi} where 4{ital Dt} is the mixing and {Phi} is the dose, is temperature independent. Its value, as well as the value of the transition temperature, agrees well with the thermodynamical model of chemically biased diffusion in a thermal spike for the four systems tested. The transition between the thermal spike regime and the temperature enhanced mixing regime was interpreted on the basis of an intracascade mechanism. The formation of an intermetallic compound in the U/Al system was detected and interpreted on a qualitative basis by crystallographic considerations.
OSTI ID:
5691988
Journal Information:
Journal of Materials Research; (USA), Journal Name: Journal of Materials Research; (USA) Vol. 6:6; ISSN JMREE; ISSN 0884-2914
Country of Publication:
United States
Language:
English