The dependence of low-temperature ion mixing of Y/Si bilayers on nuclear energy deposition

Journal Article · Sat Jun 01 04:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.348929· OSTI ID:5492487

Alford, T L; Borgesen, P ^[1]; Lilienfeld, D A ^[2]

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1. Materials Science and Engineering Department, Bard Hall, Cornell University, Ithaca, New York 14853 (USA)
2. National Nanofabrication Facility, Cornell University, Ithaca, New York 14853 (USA)

Bilayers of yttrium and amorphous silicon were irradiated with 600-keV Ar{sup ++}, Kr{sup ++}, and Xe{sup ++} ions at temperatures between 80 and 372 K. The mixing rates were considerably larger than rates predicted by a model based on overlapping thermal spikes, as well as predictions generated by an extension of the model to the case of nonoverlapping thermal spikes. However, the experimental mixing rates did exhibit a linear dependence on the nuclear energy deposited at the interface. This agrees qualitatively with the premise of nonoverlapping thermal spikes. We compare our results with other ion-mixed medium-{ital Z}, metal/metal systems which also show this tendency.

• OSTI ID: 5492487
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:11; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
360605 -- Materials-- Radiation Effects
ARGON IONS
CHARGED PARTICLES
DEPOSITION
ELEMENTS
ENERGY BEAM DEPOSITION
ION IMPLANTATION
IONS
KRYPTON IONS
LOW TEMPERATURE
METALS
MIXING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
SURFACE COATING
TRANSITION ELEMENTS
XENON IONS
YTTRIUM