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Scanning electron microscope charge-collection images of grain boundaries

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.330640· OSTI ID:5691050
Images of grain boundaries obtained in the scanning electron microscope operated in the electron beam-induced current mode are calculated. Images of boundaries in semicrystalline silicon solar cells are measured in the experiment and agree within 2% with theory. The calculated profiles depend strongly on the diffusion length of the semiconductor, providing a new method for determining the diffusion length of the material.
Research Organization:
Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, 7000 Stuttgart 80, Federal Republic of Germany
OSTI ID:
5691050
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:3; ISSN JAPIA
Country of Publication:
United States
Language:
English