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U.S. Department of Energy
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Evaluation of EBIC images at grain boundaries

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5320041

A physically appropriate model for EBIC images in polycrystalline semiconductors is developed. EBIC signals are calculated for a set of parameters ranging from 1 to 200..mu..m for the diffusion length of the grain and 5 to 60keV for the electron beam energy. Experiments on large-grain Si solar cells are performed and compared with theory. The experimental and calculated profiles agree within 2%. The analysis of the profile allows determination of the diffusion length in the grain and of the grain boundary recombination velocity.

Research Organization:
Max-Planck-Institut fur Festkorperforschung, Stuttgart
OSTI ID:
5320041
Report Number(s):
CONF-820906-
Journal Information:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
Country of Publication:
United States
Language:
English