Applications of a microbeam to the problem of soft upsets in integrated circuit memories

Journal Article · Fri Apr 01 04:00:00 EST 1983 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1983.4332496· OSTI ID:5689794

Knudson, A R; Campbell, A B

The charge from electron-hole pairs, produced by the passage of a charged particle, may be sufficiently large to alter the stored information in modern dynamic random access memories (dRAMs), thus producing a soft upset. A microbeam from a 5-MV Van de Graaff has been used to investigate the upset process in 64K dRAMs. The microbeam has also been used to investigate the related problem of charge collection by small MOS structures and its dependence on gate oxide thickness. A model relating the charge observed in the external circuit to the charge collected internally has been developed.

• Research Organization: Naval Research Laboratory, Washington, DC 20375
• OSTI ID: 5689794
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 30:2; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCELERATORS
CHARGED-PARTICLE REACTIONS
ELECTRONIC CIRCUITS
ELECTROSTATIC ACCELERATORS
INTEGRATED CIRCUITS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
NUCLEAR REACTIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
VAN DE GRAAFF ACCELERATORS