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Preparation and characterization of MoC/sub x/ thin films

Journal Article · · J. Low Temp. Phys.; (United States)
DOI:https://doi.org/10.1007/BF00682660· OSTI ID:5680607
Stoichiometric MoC has been calculated to have a T/sub c/ of 16 K. To check this prediction, thin films of MoC/sub x/ were prepared by sputtering both reactively with CH/sub 4/ and using a composite Mo-C target. The preparation conditions were varied over wide ranges of composition, substrate temperature, Ar pressure, and bias voltage. The single-phase B1 structure is formed for substrate temperatures between -100 and 1100/sup 0/C with T/sub c/ values up to 12 K. The T/sub c/ rises with increasing lattice parameter a/sub 0/. While films down to about 38 at % C were made, it was not possible to prepare samples with more than about 41 at % C in the B1 phase by this nonequilibrium technique. A linear extrapolation of the T/sub c/ versus a/sub 0/ plot yields a T/sub c/ value of about 26 K and an a/sub 0/ value of about 0.434 nm for stoichiometric composition. The temperature-dependent specific resistivity is discussed.
Research Organization:
Institut fuer Nukleare Festkorperphysik, Karlsruhe, Germany, F.R.
OSTI ID:
5680607
Journal Information:
J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 69:3-4; ISSN JLTPA
Country of Publication:
United States
Language:
English