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Title: Investigation of the electronic structure of defects in tetrahedral semiconductors by the Green's-function method

Journal Article · · J. Struct. Chem. (Engl. Transl.); (United States)
DOI:https://doi.org/10.1007/BF00755214· OSTI ID:5679664

The Green's-function (GF) method has been applied to the investigation of the electronic structure of defects in A/sup N/B/sup 8-N/ semiconductors. Localized states in the forbidden gap and resonance states in the allowed bands induced by group V and group VI impurities, mono- and multivacancies, and complexes of point defects have been considered. It has been shown that the semiempirical variant of the GF method in a basis of localized orbitals makes it possible to describe the behavior of defect levels in the framework of a single approximation for an extensive list of objects on a qualitative or semiquantitative level. Several procedures for the application of the extended defect molecule method, which makes it possible to combine the advantages of the GF and molecular cluster methods, have been discussed.

OSTI ID:
5679664
Journal Information:
J. Struct. Chem. (Engl. Transl.); (United States), Vol. 27:6; Other Information: Translated from Zh. Strukt. Khim.; 27: No. 6, 158-165(Nov-Dec 1986)
Country of Publication:
United States
Language:
English