High Gain Photoconductive Semiconductor Switching [Book Chapter]

Conference · Mon Jun 17 04:00:00 EDT 1991 · Eighth IEEE International Conference on Pulsed Power

DOI:https://doi.org/10.1109/ppc.1991.733226· OSTI ID:5677377

Zutavern, F. J. ^[1]; Loubriel, G. M. ^[1]; O'Malley, M. W. ^[1]; Helgeson, W. D. ^[1]; McLaughlin, D. L. ^[1]

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1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Switching properties are reported for high gain photoconductive semiconductor switches (PCSS). A 200 ps pulse width laser was used in tests to examine the relations between electric field, rise time, delay, and minimum optical trigger energy for switches which reached 80 kV in a 50 Ω transmission line with rise times as short as 600 ps. Infrared photoluminescence was imaged during high gain switching providing direct evidence for current filamentation. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; Naval Surface Warfare Center (NSWC)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5677377
• Report Number(s): SAND--90-2813C; CONF-910640--12; ON: DE91014668; ISBN: 0-7803-0177-3
• Conference Information: Journal Name: Eighth IEEE International Conference on Pulsed Power
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CAMERAS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LUMINESCENCE
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
PULSE RISE TIME
PULSE TECHNIQUES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES
TESTING
TIMING PROPERTIES