Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Influence of heat treatment on creep behavior of a sintered Si{sub 3}N{sub 4} ceramic

Conference ·
OSTI ID:567559
; ;  [1]
  1. Oak Ridge National Lab., TN (United States); and others
Creep behavior was investigated for a sintered Si{sub 3}N{sub 4} ceramic having been subjected to various post-fabrication heat treatments: microwave annealing at 1200{degrees}C (with preannealing at 1100{degrees}C for 10 h), 1400, 1500, and 1600{degrees}C for 10 h, and resistance-heating furnace annealing at 1200{degrees}C for 100 h. Test results at 1200{degrees}C showed that microwave annealing at 1200{degrees}C can significantly enhance the creep resistance of this material, but showed adverse effects for the material annealed at 1400{degrees}C or higher. Furnace annealing at 1200{degrees}C for 100 h was somewhat effective in lowering creep rate, hence, resulted in longer creep life compared to that of the unannealed material, but was far less effective than microwave annealing at 1200{degrees}C. Some inconsistency in creep behavior was observed, most likely resulting from nonuniformity in microwave annealing, material variation, and bias due to test machines or heating methods. This paper is an interim report which will be finalized upon completion of ongoing microstructural studies.
DOE Contract Number:
AC05-96OR22464
OSTI ID:
567559
Report Number(s):
CONF-960106--
Country of Publication:
United States
Language:
English

Similar Records

Mirowave annealing of silicon nitride materials
Conference · Fri Aug 01 00:00:00 EDT 1997 · OSTI ID:516034

Enhancement of creep resistance of a sintered Si{sub 3}N{sub 4} ceramic by microwave annealing
Conference · Thu Sep 01 00:00:00 EDT 1994 · OSTI ID:10177448

Tensile creep behavior and cyclic fatigue/creep interaction of hot- isostatically pressed Si sub 3 N sub 4
Conference · Mon Dec 31 23:00:00 EST 1990 · OSTI ID:5643366