Enhancement of creep resistance of a sintered Si{sub 3}N{sub 4} ceramic by microwave annealing
Conference
·
OSTI ID:10177448
Creep behavior was investigated for a sintered Si{sub 3}N{sub 4} Ceramic microwave annealing at 1400 and 1500 C for 20 h. Results of creep tests at 1200 C showed that microwave annealing can enhance the creep resistance in terms of lowering creep rate and, hence, extending creep rupture life, but the 1400 C annealing was most effective. X-ray diffraction analyses showed that the crystalline second phase was transformed as a result of microwave annealing from single phase Y{sub 10}Al{sub 2}Si{sub 3}O{sub 18}N{sub 4} to several different phases. The situation was further complicated by evolution of additional phases during high temperature creep experiments.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 10177448
- Report Number(s):
- CONF-9310328--2; ON: DE94017688
- Country of Publication:
- United States
- Language:
- English
Similar Records
Enhancement of creep resistance of a sintered Si{sub 3}N{sub 4} ceramic by microwave annealing
Influence of heat treatment on creep behavior of a sintered Si{sub 3}N{sub 4} ceramic
Crystallization of grain boundary phases in silicon nitride with low additive contents by microwave annealing
Conference
·
Thu Sep 01 00:00:00 EDT 1994
·
OSTI ID:10178658
Influence of heat treatment on creep behavior of a sintered Si{sub 3}N{sub 4} ceramic
Conference
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:567559
Crystallization of grain boundary phases in silicon nitride with low additive contents by microwave annealing
Conference
·
Tue Jun 01 00:00:00 EDT 1993
·
OSTI ID:10162794