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U.S. Department of Energy
Office of Scientific and Technical Information

Thin film cadmium telluride solar cells. Technical progress report No. 2, October 1-December 31, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5673126· OSTI ID:5673126

The objectives of this contract are to investigate thin films of cadmium telluride on low cost substrates and to demonstrate the feasibility of producing thin film cells with a conversion efficiency of 10% or higher. The chemical vapor deposition of cadmium telluride films on foreign substrates by the direct combination of the elements has been further investigated. Inert substrates such as graphite and tungsten/graphite are not suitable for the deposition of device quality cadmium telluride films because of the rectifying interface and pinhole problems. Indium coated W/graphite forms an ohmic contact with n-type cadmium telluride, and the deposited films are essentially free of pinholes. The properties of Ag/n-CdTe/In/W/graphite structures, such as the current-voltage characteristics as a function of temperature, the barrier height, the photovoltaic properties, and the intragrain diffusion length in cadmium telluride, have been investigated. Preliminary work has also been carried out on the deposition of p-type cadmium telluride films on Sb/W/graphite substrates. The reaction between cadmium iodide and tellurium in a hydrogen atmosphere has been concluded to be unsuitable for the deposition of cadmium telluride films.

Research Organization:
Southern Methodist Univ., Dallas, TX (USA)
DOE Contract Number:
AC04-79ET23009
OSTI ID:
5673126
Report Number(s):
DOE/ET/23009-T2
Country of Publication:
United States
Language:
English