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Thin films of silicon on metallurgical silicon substrates-Phase II. Topical report No. 1. Polycrystalline silicon P-N junctions

Technical Report ·
OSTI ID:5663809
Silicon films deposited on recrystallized metallurgical silicon substrates have been used for the fabrication of low cost solar cells. The substrate is polycrystalline, and the active region of the solar cell is epitaxial with respect to the substrate. Since the dark current-voltage characteristics of a solar cell are important factors affecting its conversion efficiency, the characteristics of a number of epitaxial mesa diodes of the configuration n/sup +/-silicon/p-silicon/p/sup +/-metallurgical silicon/graphite have been measured over a wide temperature range to study the effects of grain boundaries. The results were analyzed on the basis of the two-exponential model.
Research Organization:
Southern Methodist Univ., Dallas, TX (USA)
DOE Contract Number:
AC03-76ET20405
OSTI ID:
5663809
Report Number(s):
DOE/ET/20405-T6; ON: DE81027643
Country of Publication:
United States
Language:
English