Thin films of silicon on metallurgical silicon substrates. Final report, 1 September 1976-30 September, 1979
The principal approach used in this work is the deposition of a silicon film of controlled thickness and dopant distribution on a purified metallurgical silicon substrate. Efforts have been directed to (1) the purification of metallurgical silicon, (2) the preparation of metallurgical silicon substrates, (3) the deposition and characterization of silicon films on metallurgical silicon substrates, (4) the properties of polycrystalline silicon p-n junctions on metallurgical silicon substrates, (5) the fabrication and characterization of silicon solar cells on purified metallurgical silicon substrates, (6) the investigation of stability of thin film polycrystalline silicon solar cells, and (7) the reduction of the electrical effects of grain boundaries. A number of significant results have been obtained. Metallurgical silicon has been purified by a low cost technique, acid-extraction and phosphorus pentoxide treatment, to yield materials suitable for substrate purposes. Recrystallization techniques have been developed to produce large grain silicon sheet supported on graphite. Silicon films of controlled thickness and dopant distribution have been deposited on metallurgical silicon substrates, and the properties of silicon films and epitaxial p-n junctions have been investigated in detail. Polycrystalline silicon solar cells have been fabricated, and their properties including current-voltage characteristics, spectral response, minority carrier diffusion length, dopant profile, and stability, have been characterized in detail. The properties of grain boundaries in polycrystalline silicon solar cells have been investigated by photoresponse scan and EBIC techniques.
- Research Organization:
- Southern Methodist Univ., Dallas, TX (USA)
- OSTI ID:
- 5416331
- Report Number(s):
- SAN-1285-T2
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin films of silicon on metallurgical silicon substrates: Phase II. Quarterly project report No. 2, December 1, 1977--28 February 1978
Thin films of silicon on metallurgical silicon substrates. Phase II. Quarterly project report, March 1-May 31, 1978
Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARBON
CRYSTAL STRUCTURE
DATA
DATA FORMS
DEPOSITION
DIFFUSION LENGTH
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
FILMS
GRAIN BOUNDARIES
GRAPHITE
GRAPHS
HEAT TREATMENTS
IMPURITIES
INFORMATION
JUNCTIONS
MELTING
MICROSTRUCTURE
NONMETALS
NUMERICAL DATA
P-N JUNCTIONS
PERFORMANCE
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PURIFICATION
RECRYSTALLIZATION
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLIDIFICATION
SPECTRAL RESPONSE
SUBSTRATES
ZONE MELTING