Initial stages of Ga and As growth on EuBa sub 2 Cu sub 3 O sub 7 minus y (001)

Journal Article · Mon Jul 15 00:00:00 EDT 1991 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.105596· OSTI ID:5662816

Maeda, F; Sugahara, H; Oshima, M ^[1]; Michikami, O ^[2]

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1. NTT Applied Electronics Laboratories, Midori-cho Musashino-shi, Tokyo 180, Japan (JP)
2. NTT Applied Electronics Laboratories, Tokai, Ibaraki 319-11, Japan (JP)

The first photoelectron spectroscopy results are presented for Ga and As growth on EuBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital y}}(001) (EBCO) surfaces. Growth models are shown that explain these results. In Ga growth, the oxide state Ga initially covers the EBCO surface and then metallic state Ga grows on this surface as islands. On the other hand, As grows only one monolayer as the As oxide form without breaking CuO bonds at the As-EBCO interface, implying that it may be possible to grow GaAs films on EBCO with the As-oxide interlayer.

• OSTI ID: 5662816
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 59:3; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
CRYSTAL GROWTH
ELEMENTS
EUROPIUM COMPOUNDS
EUROPIUM OXIDES
FABRICATION
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH-TC SUPERCONDUCTORS
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
RARE EARTH COMPOUNDS
SEMIMETALS
SORPTIVE PROPERTIES
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTORS
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS