Comparison of F(2)-Based Gases for High-Rate Dry Etching of Si
- Sandia National Laboratories
Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to {approximately}8 {micro}m/min were achieved with pure SF{sub 6} discharges at high source power (1500W) and pressure (35mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order BF{sub 3} < NF{sub 3} < PF{sub 5} < SF{sub 6}. This is in good correlation with the average bond energies of the gases, except for NF{sub 3}, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated NF{sub 3}, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 5660
- Report Number(s):
- SAND99-0754J
- Journal Information:
- Journal of Electrochemistry Society, Journal Name: Journal of Electrochemistry Society
- Country of Publication:
- United States
- Language:
- English
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