Comparison of F{sub 2}-based gases for high rate dry etching of Si

Journal Article · Fri Oct 01 04:00:00 EDT 1999 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1392556· OSTI ID:20001091

Hays, D C; Jung, K B; Hahn, Y B; Lambers, E S; Pearton, S J; Donahue, J; Johnson, D; Shul, R J

Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined for high rate inductively coupled plasma (ICP) etching of Si. Etch rates up to {approximately}8 {micro}m/min were achieved with pure SF{sub 6} discharges at high source power (1500 W) and pressure (35 mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order BF{sub 3}< NF{sub 3} < PF{sub 5} < SF{sub 6}. This is in good correlation with the average bond energies of the gases, except for NF{sub 3}, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiency dissociated NF{sub 3}, but the etched Si surface morphologies were significantly worse with this gas than with the other three gases.

• Research Organization: Univ. of Florida, Gainesville, FL (US)
• Sponsoring Organization: US Department of Energy
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 20001091
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 10 Vol. 146; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
BORON FLUORIDES
ELECTRIC DISCHARGES
ETCHING
NITROGEN FLUORIDES
PHOSPHORUS FLUORIDES
SILICON
SULFUR FLUORIDES