Effects of impurities on radiation damage in InP

Journal Article · Fri Aug 01 00:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337334· OSTI ID:5659819

Yamaguchi, M; Ando, K

Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-italic-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E-italic/sub v-italic/+0.52 eV) in p-italic-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed.

• Research Organization: NTT Electrical Communications Laboratories, Tokai, Ibaraki-ken 319-11, Japan
• OSTI ID: 5659819
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ATOM TRANSPORT
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DIFFUSION
HEAT TREATMENTS
IMPURITIES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
NEUTRAL-PARTICLE TRANSPORT
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION TRANSPORT
TRAPS