Mobility of electrons and holes in semiconductors

Conference · Sat Feb 29 23:00:00 EST 1992

OSTI ID:5657462

Mahan, G D ^[1]; Sanborn, B A; Allen, P B ^[2]

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1. Tennessee Univ., Knoxville, TN (United States). Dept. of Physics and Astronomy Oak Ridge National Lab., TN (United States)
2. State Univ. of New York, Stony Brook, NY (United States). Dept. of Physics

The mobility of electrons and holes is calculated in silicon as a function of temperature and the concentration of impurities. Calculations are done for both majority and minority carriers. Special care has been taken in the calculation of the contribution from impurity scattering. Both the dielectric function, and the local field corrections, have been calculated as a function of temperature and impurity concentration. The results agree with the data at low temperature, and at high doping at room temperature.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5657462
• Report Number(s): CONF-920309-1; ON: DE92010125; CNN: DMR 9118414
• Country of Publication: United States
• Language: English

Related Subjects

665000* -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOLTZMANN EQUATION
CARRIER MOBILITY
DIFFERENTIAL EQUATIONS
EQUATIONS
HOLE MOBILITY
IMPURITIES
MATERIALS
MOBILITY
PARTIAL DIFFERENTIAL EQUATIONS
SCATTERING
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE