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Photovoltage decay in p-n junction solar cells including the effects of recombinations in the emitter

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.332257· OSTI ID:5647261
The expressions for the open circuit photovoltage decay in a p-n junction solar cell are derived, including the effects of recombinations in the emitter. It is shown that for a cell with base thickness w/sub B/>>L/sub B/, the base diffusion length, the voltage decay rate for small values of time depends on the emitter dark saturation current J/sub E/0; the larger the value of J/sub E/0 , the faster is the initial rate of voltage decay. For large values of time, the rate of voltage decay is solely determined by the minority carrier lifetime in the base tau/sub B/ and is independent of J/sub E/0 . However, for a cell with w/sub B/< or approx. =L/sub B/, the voltage decay is linear from the very beginning and the decay rate is of the form (kT/e)((1/tau/sub B/) +(1/t/sub 1/)). The time constant t/sub 1/ is independent of tau/sub B/ . It, however, depends on the base thickness, the effective back surface recombination velocity, and the emitter dark saturation current J/sub E/0 . The value of J/sub E/0 depends on emitter thickness, front surface recombination velocity, drift field in the emitter, band-gap narrowing, and Auger recombinations in the emitter.
Research Organization:
Solid state Physics Laboratory, Lucknow Road, Delhi-110007, India
OSTI ID:
5647261
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:4; ISSN JAPIA
Country of Publication:
United States
Language:
English