Lateral, unidirectional, bipolar-type insulated-gate transistor: A novel semiconductor device

Journal Article · Mon Mar 15 00:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93130· OSTI ID:5644591

Omura, Y

A lateral, unidirectional, bipolar-type insulated-gate transistor (Lubistor) is newly proposed. It has three features: a p/sup +/-n (or p)-n/sup +/ structure, an insulated gate on the n(or p) region, and the thickness of the n(or p) region is approximately equal to or less than the effective Debye length. It is shown that the Lubistor has triodelike current-voltage characteristics, and that the characteristic curve shifts continuously toward a high anode-to-cathode bias along the anode-to-cathode voltage axis when the gate-to-cathode voltage enhances the majority-carrier concentration in the channel region.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, 180 Japan
• OSTI ID: 5644591
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 40:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
TRANSISTORS
ELECTRICAL INSULATION
ANODES
CARRIER DENSITY
CATHODES
CHARGE CARRIERS
DEBYE LENGTH
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
P-N JUNCTIONS
SEMICONDUCTOR DEVICES
THICKNESS
CURRENTS
DIMENSIONS
ELECTRODES
JUNCTIONS
LENGTH
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
420800* - Engineering- Electronic Circuits & Devices- (-1989)