Design, fabrication, characterization, and modeling of a novel semiconductor device - the metal oxide semiconductor bipolar junction transistor
A novel four-terminal semi-conductor device termed the metal oxide semiconductor bipolar junction transistor (MOSBJT) is described. Within this device the electrical behaviors of the MOSFET and BJT are merged. When biased into the forward active operating mode, the MOS surface structure is inverted, and a diffused electrical contact (the Drain) provides a means to reverse bias the inversion layer with respect to the base. Electrons injected into the base region diffuse across the base and are collected along the inversion layer reduces the reverse bias of the inversion-layer/base junction. If sufficient voltage drop occurs, the inversion-layer/base junction furthest from the drain contact may be debiased. This reduces the active collector area and the magnitude of the collected current (the drain current). Since the inversion-layer voltage drop is dependent on the gate voltage and base bias, these two control terminals have a significant effect on the electrical behavior of the MOSJBT. Five sets of MOSBJTs were fabricated with identical gate lengths but with varying gate shapes. Each device group contains MOSBJTs with three non-rectangular gate geometries. The devices are simultaneously fabricated using a procedure designed to optimize the performance of both the MOS and BJT components of the MOSBJT. Areas of application for the MOSBJT are identified and characterized.
- Research Organization:
- Hawaii Univ., Honolulu (USA)
- OSTI ID:
- 5303767
- Resource Relation:
- Other Information: Thesis (Ph. D.)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Interfacial band configuration and electrical properties of LaAlO{sub 3}/Al{sub 2}O{sub 3}/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
High-performance self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO{sub 2}