Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures by secondary-ion mass spectrometry and ion channeling

Journal Article · Mon Mar 25 00:00:00 EST 1991 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104344· OSTI ID:5633996

Chan, K T ^[1]; Kirschbaum, C L ^[2]; Yu, K M ^[3]

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1. Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (US)
2. Charles Evans Associates, 301 Chesapeake Drive, Redwood City, California 94063 (USA)
3. Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (USA)

Secondary-ion mass spectrometry has been used to analyze the Al and In depth profiles in pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. Surface segregation of In was found on the upper interface of the strained InGaAs layer under a moderate growth temperature of 510 {degree}C. The segregation effect was found to be suppressed when the As{sub 4} overpressure was doubled. Ion channeling measurements are capable of differentiating the coherency of the strained InGaAs layer in the samples studied. A correlation was found between the coherency of the layer and its electrical transport property.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5633996
• Journal Information: Applied Physics Letters; (USA), Vol. 58:12; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
47 OTHER INSTRUMENTATION
FIELD EFFECT TRANSISTORS
DESIGN
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
ION CHANNELING
LAWRENCE BERKELEY LABORATORY
MASS SPECTROSCOPY
PHOTOLUMINESCENCE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
NATIONAL ORGANIZATIONS
PNICTIDES
SEMICONDUCTOR DEVICES
SPECTROSCOPY
TRANSISTORS
US AEC
US DOE
US ERDA
US ORGANIZATIONS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
440800 - Miscellaneous Instrumentation- (1990-)