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Title: Electrical conductivity, Seebeck Coefficient, and structure of In/sub 2/O/sub 3/-SnO/sub 2/

Journal Article · · Am. Ceram. Soc. Bull.; (United States)
OSTI ID:5633782

Indium-tin oxide compositions, commonly labeled ITO, are used as thin films, transparent heat reflectors, heterogeneous junction solar cells, protective conductive coatings, and antistatic coatings. These ITO films generally contain <10%)SnO/sub 2/ and the electrical transport and optical properties of these thin films have been studied extensively. The electrical conductivities can be high, up to approx. =10/sup 5/ (lambda.cm)/sup -1/ with the absolute conductivity values dependent on deposition method, composition, stoichiometry, oxygen partial pressure, and film thickness. The ITO films exhibit varied band gaps and are considered degenerate semiconductors with electrons as the major charge carrier. The high conduction is attributed to a defect structure resulting from charge-compensating oxygen vacancies caused by stoichiometry reduction at low oxygen pressure or doping with elements, such as Sn or F. Thin-film properties are not generally the same as bulk properties. Although bulk electrical properties have been reported for In/sub 2/O/sub 3/, SnO/sub 2/, and for doped SnO/sub 2/, none have been reported for bulk ITO. In addition, studies of the system In/sub 2/O/sub 3/-SnO/sub 2/ with >15% SnO/sub 2/ have not been reported. In the present study, electrical transport and structural properties of bulk In/sub 2/O/sub 3/-SnO/sub 2/ in air were determined as functions of temperature, structure, and composition.

Research Organization:
Pacific Northwest Lab., Richland, WA 99352
OSTI ID:
5633782
Journal Information:
Am. Ceram. Soc. Bull.; (United States), Vol. 65:4
Country of Publication:
United States
Language:
English

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