A new transparent conducting oxide in the Ga{sub 2}O{sub 3}{endash}In{sub 2}O{sub 3}{endash}SnO{sub 2} system
- Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208 (United States)
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208 (United States)
A new transparent conducting oxide (TCO), which can be expressed as Ga{sub 3{minus}x}In{sub 5+x}Sn{sub 2}O{sub 16}; 0.2{le}x{le}1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga{sub 2}O{sub 3}{endash}In{sub 2}O{sub 3}{endash}SnO{sub 2} are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 {Omega}cm{sup {minus}1} was obtained for H{sub 2}-reduced Ga{sub 2.4}In{sub 5.6}Sn{sub 2}O{sub 16}. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In{sub 2}O{sub 3}. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 526486
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrical properties of pure In[sub 2]O[sub 3] and Sn-doped In[sub 2]O[sub 3] single crystals and ceramics
Characterization of SnO{sub 2}/Al{sub 2}O{sub 3} lean NO{sub x} catalysts