Pressure-induced superconductivity in high-pressure phases of Si

Journal Article · Sun Jun 01 04:00:00 EDT 1986 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.33.7820· OSTI ID:5633035

Lin, T H; Dong, W Y; Dunn, K J; Wagner, C N.J.; Bundy, F P

The electrical behavior of Si was studied for pressures up to 43 GPa and temperatures down to 2 K using a sintered-diamond compact anvil cryogenic clamp press. Two types of samples, amorphous thin-film Si and semiconductor-quality crystalline Si, were used. The superconducting transition temperatures T/sub c/ for high-pressure phases of the amorphous Si are about 3 K higher than those of the crystalline Si. The T/sub c/ decreases monotonically for pressures higher than 25 GPa. No upturn in T/sub c/ around 25 GPa as predicted theoretically for the simple-hexagonal phase was observed.

• Research Organization: Department of Materials Science and Engineering, School of Engineering and Applied Science, University of California, Los Angeles, California 90024
• OSTI ID: 5633035
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 33:11; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
656102 -- Solid State Physics-- Superconductivity-- Acoustic
Electronic
Magnetic
Optical
& Thermal Phenomena-- (-1987)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
CRYSTALS
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EXPERIMENTAL DATA
FILMS
HEXAGONAL LATTICES
INFORMATION
NUMERICAL DATA
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PRESSURE DEPENDENCE
SEMIMETALS
SILICON
SUPERCONDUCTIVITY
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
ULTRALOW TEMPERATURE
VERY HIGH PRESSURE